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零件编号 | DB3 | ||
描述 | SILICON BIDIRECTIONAL DIACS | ||
制造商 | SEMTECH | ||
LOGO | |||
1 Page
DB3, DB4, DC34
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse
current. These diacs are intended for use in thyristor phase
control, circuits for lamp-dimming, universal-motor speed
controls, and heat controls.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Part No.
Black
"ST" Brand
XXX
Max. 3.9
ST
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation (Ta = 65 OC)
Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)
Operating Junction and Storage Temperature Range
Symbol
Ptot
ITRM
Tj,Tstg
Value
150
2
- 40 to + 125
Unit
mW
A
OC
Characteristics at Ta = 25 OC
Parameter
Breakover Voltage
Breakover Currents
Breakover Voltage Symmetry
Dynamic Breakover Voltage
ΔI = [IBR to IF = 10 mA]
DB3
DC34
DB4
Symbol
V(BR)1 and V(BR)2
I(BR)1 and I(BR)2
[V(BR)1]-[V(BR)2]
| ΔV ± |
Min.
28
30
35
-
-
5
Max.
36
38
45
200
3.8
-
Unit
V
µA
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/11/2008
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页数 | 2 页 | ||
下载 | [ DB3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DB-2933-54 | RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs | STMicroelectronics |
DB-3 | Silicon Bidirectional DIAC | Semtech Corporation |
DB-4 | Bi-directional trigger diodes | Leshan Radio Company |
DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor | ST Microelectronics |
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