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PDF ( 数据手册 , 数据表 ) IS46DR86400D

零件编号 IS46DR86400D
描述 DDR2 DRAM
制造商 ISSI
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IS46DR86400D 数据手册, 描述, 功能
IS43/46DR86400D
IS43/46DR16320D
64Mx8, 32Mx16 DDR2 DRAM
FEATURES
Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers
per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions
with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, and 6
supported
Posted CAS and programmable additive latency
(AL) 0, 1, 2, 3, 4, and 5 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and
reduced strength options
On-die termination (ODT)
APRIL 2014
DESCRIPTION
ISSI's 512Mb DDR2 SDRAM uses a double-data-rate
architecture to achieve high-speed operation. The
double-data rate architecture is essentially a 4n-prefetch
architecture, with an interface designed to transfer two
data words per clock cycle at the I/O balls.
ADDRESS TABLE
Parameter
Configuration
Refresh Count
64M x 8
16M x 8 x 4
banks
8K/64ms
32M x 16
8M x 16 x 4
banks
8K/64ms
Row Addressing
Column
Addressing
Bank Addressing
16K (A0-A13) 8K (A0-A12)
1K (A0-A9) 1K (A0-A9)
BA0, BA1
BA0, BA1
Precharge
Addressing
A10
A10
OPTIONS
Configuration(s):
64Mx8 (16Mx8x4 banks) IS43/46DR86400D
32Mx16 (8Mx16x4 banks) IS43/46DR16320D
Package:
x8: 60-ball BGA (8mm x 10.5mm)
x16: 84-ball WBGA (8mm x 12.5mm)
Timing – Cycle time
2.5ns @CL=5 DDR2-800D
2.5ns @CL=6 DDR2-800E
3.0ns @CL=5 DDR2-667D
3.75ns @CL=4 DDR2-533C
5ns @CL=3 DDR2-400B
Temperature Range:
Commercial (0°C Tc 85°C)
Industrial (-40°C Tc 95°C; -40°C Ta 85°C)
Automotive, A1 (-40°C Tc 95°C; -40°C Ta 85°C)
Automotive, A2 (-40°C Tc; Ta 105°C)
Tc = Case Temp, Ta = Ambient Temp
KEY TIMING PARAMETERS
Speed Grade -25D -3D
tRCD
12.5 15
tRP 12.5 15
tRC 55 55
tRAS
40 40
tCK @CL=3
55
tCK @CL=4
3.75 3.75
tCK @CL=5
2.5 3
tCK @CL=6
2.5 —
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. A
4/21/2014







IS46DR86400D pdf, 数据表
IS43/46DR86400D, IS43/46DR16320D
Operating Temperature Condition
Symbol Parameter
Rating(1,2,3)
TOPER Commercial Temperature
Tc = 0 to +85
Industrial Temperature,
Tc = -40 to +95
Automotive Temperature (A1)
Ta = -40 to +85
Automotive Temperature (A2)
Tc = -40 to +105
Ta = -40 to +105
Notes:
1. Tc = Operating case temperature at center of package
2. Ta = Operating ambient temperature immediately above package center.
3. Both temperature specifications must be met.
Units
oC
oC
oC
oC
oC
Thermal Resistance:
Package
60-ball BGA
84-ball BGA
Substrate
4-layer
4-layer
Theta-ja
(Airflow = 0m/s)
49.4
42.5
Theta-ja
(Airflow = 1m/s)
45.3
38.8
Theta-ja
(Airflow = 2m/s)
42.9
36.6
Theta-jc
9.1
8.4
Units
C/W
C/W
ODT DC Electrical Characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMR(1)[A6,A2]=0,1; 75 Ω
Rtt effective impedance value for EMR(1)[A6,A2]=1,0; 150 Ω
Rtt effective impedance value for EMR(1)[A6,A2]=1,1; 50 Ω
Deviation of VM with respect to VDDQ/2
Notes:
1. Test condition for Rtt measurements
SYMBOL
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
ΔVM
MIN
60
120
40
-6
NOM
75
150
50
MAX
90
180
60
+6
UNITS
Ω
Ω
Ω
%
NOTES
1
1
1
1
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL
(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Rtt (eff) Vih (ac) - Vil (ac)
I(Vih (ac)) - I(Vil (ac))
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
ΔVM = [(2 x VM / VDDQ) - 1] x 100%
8 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
4/21/2014







IS46DR86400D equivalent, schematic
IS43/46DR86400D, IS43/46DR16320D
Electrical Characteristics & AC Timing Specifications
Refresh parameters (TOPER; VDDQ = 1.8 V +/- 0.1 V; VDD = 1.8 V +/- 0.1 V)
Parameter
Symbol
Units Notes
Refresh to active/Refresh command time tRFC
105 ns 1
Average periodic refresh interval
tREFI
-40oC Tc < 0oC
0oC Tc 85oC
85oC < Tc 95oC
95oC < Tc 105oC
7.8 ms 1,2
7.8 ms 1
3.9 ms 1,2
3.9 ms 1,2,3
Notes:
1. If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
2. Specified for Industrial and Automotive grade only; not applicable for Commercial grade. Toper may not be violated.
3. Specified for Automotive grade (A2) only; not applicable for any other grade. Toper may not be violated.
Key Timing Parameters by Speed Grade
-25D
-25E
Speed bin (JEDEC) DDR2-800D DDR2-800E
CL-tRCD-tRP
5-5-5
6-6-6
tRCD
12.5 15
tRP 12.5 15
tRC 55 55
tRAS
40 40
tCK(avg)@CL=3
5
5
tCK(avg)@CL=4
3.75
3.75
tCK(avg)@CL=5
2.5
3
tCK(avg)@CL=6
2.5
2.5
-3D
DDR2-667D
5-5-5
15
15
55
40
5
3.75
3
-37C
DDR2-533C
4-4-4
15
15
55
40
5
3.75
-5B
DDR2-400B
3-3-3
15
15
55
40
5
5
Note:
Each of the -25D and -3D speed options is individually backward compatible with all the timing specifications for slower options (ie. -25D
complies with specifications for -25D, -25E, -3D, -37C, -5B). -25E, -37C, and -5B shown for reference only.
16 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
4/21/2014










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