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PDF ( 数据手册 , 数据表 ) IS29LV032T

零件编号 IS29LV032T
描述 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory
制造商 ISSI
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IS29LV032T 数据手册, 描述, 功能
IS29LV032T/B
IS29LV032T/B
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access time 70 ns
- 90 ns devices (Call Factory)
Low power consumption (typical values at
5 MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA current in standby or automatic
sleep mode
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors
- 8-Kbyte sectors for Top or Bottom boot
- Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors
Secured Silicon Sector
- Provides a 128-words area for code or data
that can be permanently protected.
- Once this sector is protected, it is prohibited
to program or erase within the sector again.
High performance program/erase speed
- Word program time: 15µs typical
- Sector erase time: 100ms typical
- Chip erase time: 8s typical
JEDEC Standard compatible
Standard DATA# polling and toggle bits
feature
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Low Vcc write inhibit < 2.5V
Minimum 100K program/erase endurance
cycles
RESET# hardware reset pin
- Hardware method to reset the device to read
mode
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA (Call Factory)
Industrial Temperature Range (-40 to 85 C)
Automotive Grades Range (Call Factory)
GENERAL DESCRIPTION
The IS29LV032T/B is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 4,194,304 bytes or 2.097,152 words available in top or bottom boot configurations.
Any word can be programmed typically in 15µs. The IS29LV032T/B features 3.0V voltage read and
write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-
performance microprocessor systems.
The IS29LV032T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. D
07/16/2014
1







IS29LV032T pdf, 数据表
Table 3. PRODUCT SELECTOR GUIDE
Product Number
Speed
Max Access Time, ns (tacc)
Max CE# Access, ns (tce)
Max OE# Access, ns (toe)
BLOCK DIAGRAM
IS29LV032T/B
IS29LV032T/B
-70
70
70
30
Vcc RY/BY#
Vss
WE#
State
Control
Command
Register
CE#
OE#
Vcc Detector
A0-A20
Block Protect Switches
Erase Voltage Generator
DQ0-DQ15 (A-1)
Input/Output Buffers
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Data Latch
Timer
Y-Decoder
STB
X-Decoder
Y-Gating
Cell Matrix
Integrated Silicon Solution, Inc.- www.issi.com
Rev. D
07/16/2014
8







IS29LV032T equivalent, schematic
Addresses
(Word mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
IS29LV032T/B
Table 10. Device Geometry Definition
Addresses
(Byte Mode)
4Eh
Data
0016h
Description
Device Size = 2N bytes
50h 0002h Flash Device Interface description (refer to CFI publication
52h 0000h 100)
54h 0000h Max. number of byte in multi-byte write = 2N
56h 0000h (00h = not supported)
58h 0002h Number of Erase Block Regions within device
5Ah 0007h
5Ch 0000h Erase Block Region 1 Information
5Eh 0020h (refer to the CFI specification of CFI publication 100)
60h 0000h
62h 003Eh
64h
66h
0000h
0000h
Erase Block Region 2 Information
68h 0001h
6Ah 0000h
6Ch
6Eh
0000h
0000h
Erase Block Region 3 Information
70h 0000h
72h 0000h
74h
76h
0000h
0000h
Erase Block Region 4 Information
78h 0000h
Addresses
(Word Mode)
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Ah
4Bh
4Ch
4Dh
4Eh
4Fh
Table 11. Primary Vendor-specific Extended Query
Addresses
(Byte Mode)
Data
Description
80h 0050h
82h 0052h Query-unique ASCII string “PRI”
84h 0049h
86h 0031h Major version number, ASCII
88h 0031h Minor version number, ASCII
8Ah
0000h
Address Sensitive Unlock
0 = Required, 1 = Not Required
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
8Eh
0004h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
92h 0004h 01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
9Ah
00A5h
Minimum ACC (Acceleration) Supply Voltage
00 = Not Supported, DQ7-DQ4 : Volts, DQ3-DQ0 : 100mV
9Ch
00B5h
Maximum ACC (Acceleration) Supply Voltage
00 = Not Supported, DQ7-DQ4 : Volts, DQ3-DQ0 : 100mV
9Eh
0002h/ Top/Bottom Boot Sector Identifier
0003h 02h = Bottom Boot, 03h = Top Boot
Integrated Silicon Solution, Inc.- www.issi.com
Rev. D
07/16/2014
16










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