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零件编号 | CM1000HA-28H | ||
描述 | HIGH POWER SWITCHING USE INSULATED TYPE | ||
制造商 | Mitsubishi Electric Semiconductor | ||
LOGO | |||
1 Page
MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
U - M4 THD
R (2 TYP.)
K
P
M
C
E
G
E
C
B
S - M8 THD
(2 TYP.)
A
JG
Q
T - DIA.
(4 TYP.)
L
H
F
N
D
E
EC
G
E
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C
1.840
46.75
D 1.73+0.04/–0.02 44.0+1.0/–0.5
E 1.46+0.04/–0.02 37.0+1.0/–0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.79
0.77
0.75
0.61
0.51
0.35
M8 Metric
0.26 Dia.
M4 Metric
Millimeters
20.0
19.5
19.0
15.6
13.0
9.0
M8
Dia. 6.5
M4
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-28H is a 1400V
(VCES), 1000 Ampere Single IGBT
Module.
Type
CM
Current Rating
Amperes
1000
VCES
Volts (x 50)
28
Sep.1998
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页数 | 4 页 | ||
下载 | [ CM1000HA-28H.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CM1000HA-28H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
CM1000HA-28H | Single IGBTMOD 1000 Amperes/1400 Volts | Powerex Power Semiconductors |
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