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零件编号 | PL2301GD | ||
描述 | P-Channel High Density Trench MOSFET | ||
制造商 | PULAN TECHNOLOGY | ||
LOGO | |||
1 Page
PL2301GD
PULAN TECHNOLOGY CO., LIMITED
P-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
-20V
-2.2 125 @ VGS= 4.5V
-1.4 170 @ VGS= 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
SOT-23-3
D
D
S
G
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS -20
V
Gate-Source Voltage
VGS ± 8
V
Drain Current-Continuousa@ TA= 25 °C
b
-Pulse
Drain-Source Diode Forward Current a
Maximum Power Dissipationa
TA=25°C
TA=75°C
Operating Junction and Storage
Temperature Range
ID
IDM
IS
PD
TJ,TSTG
-2.2
-6
-0.75
1.25
0.75
- 55 to 150
A
A
A
W
°C
THERMAL CHARACTERISTICS
a
Thermal Resistance,Junction-to-Ambient
RthJA
100
°C/W
Note
a. Surface Mounted on FR4 Board , t ≤ 10sec .
b. Pulse width limited by maximum junction temperature.
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页数 | 4 页 | ||
下载 | [ PL2301GD.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PL2301GD | P-Channel High Density Trench MOSFET | PULAN TECHNOLOGY |
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