DataSheet8.cn


PDF ( 数据手册 , 数据表 ) 5N90

零件编号 5N90
描述 N-Channel Power MOSFET / Transistor
制造商 nELL
LOGO nELL LOGO 


1 Page

No Preview Available !

5N90 数据手册, 描述, 功能
SEMICONDUCTOR
5N90 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(5A, 900Volts)
DESCRIPTION
The Nell 5N90 is a three-terminal silicon device with
current conduction capability of 5A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 900V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits and general
purpose switching applications.
D
GDS
TO-220AB
(5N90A)
GDS
TO-220F
(5N90AF)
FEATURES
RDS(ON) = 2.80Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
5
900
2.80 @ VGS = 10V
40
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
TJ=25°C to 150°C
RGS=20KΩ
TC=25°C
TC=100°C
IAR=5A, RGS=50Ω, VGS=10V
IAS=5A, L=52.8mH
PD
TO-220AB
Total power dissipation (Derating factor above 25°C) TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
VALUE
900
900
±30
5
3.1
12
5
5.1
660
4.0
125
38
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W(W /°C)
ºC
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V, L=52.8mH, IAS=5A, RGS=25Ω,starting TJ=25˚C
3.ISD 5.4A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8







5N90 pdf, 数据表
SEMICONDUCTOR
5N90 Series RRooHHSS
Nell High Power Products
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
GDS
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
D (Drain)
All dimensions in millimeters(inches)
G
(Gate)
S (Source)
TO-220F
16.4
15.4
10.6
10.4
D
GS
3.4
3.1
3.7
3.2 7.1
6.7
16.0
15.8
2.8
2.6
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
2.54
TYP
4.8
4.6
0.48
0.44
2.85
2.65
All dimensions in millimeters
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 8 of 8














页数 8 页
下载[ 5N90.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
5N90N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
5N90N-Channel Power MOSFET / TransistornELL
nELL
5N90FQA5N90Fairchild Semiconductor
Fairchild Semiconductor
5N90N-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap