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零件编号 | DAN202U | ||
描述 | Plastic-Encapsulate Diodes | ||
制造商 | WILLAS | ||
LOGO | |||
1 Page
WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN202UTHRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
SWITCbHeItNteGr reDveIOrsDe Eleakage current and thermal resistance.
FEAT•ULoRopwtEimSpir:zoefibleosaurdrfaspceacmeo. unted application in order to
z F•ouLorwtyppoewserolof spsa, chkigahgeifnfigcieanrcey.available
z H•igHhigshpceuerrdent capability, low forward voltage drop.
z S••uGHitaiugbahrldesruifrnoggrefhocarigpohavebprilvaitoycl.tkaignegpdroetnecstiitoynl.ayout
z H•igUhltrraehliiagbh-ilsitpyeed switching.
z P•bS-Filirceoen eppaitcaxkiaalgpelainsaracvhaipi,lambetlael silicon junction.
• Lead-free parts meet environmental standards of
RoMHISL-SpTroDd-1u9c5t0f0o/r22p8acking code suffix ”G”
H•aRloogHeSnprofrdeuect pforropdacukcintgfocordpeasucfkfixin"gG"code suffix “H”
Halogen free product for packing code suffix "H"
z MMoiestcuhreaSneincsailtivdiatytaLevel 1
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOSTO-D3-21323H
0.146(3.7)
0.130(3.3)
1
2
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARK• MINoGun:tNing Position : Any
• Weight : Approximated 0.011 gram
Maximum RaMtiAnXgIsMaUnMdREAleTcINtrGicSalACNhDaEraLcEtCerTiRstIiCcAsL, SCiHngAlReADCiToEdReI@STTICa=S25 ℃
Ratings at 25℃ Pamarbaiemntetteemr perature unless otherwSisyemsbpoecl ified.
Limit
Unit
SFPoienrgaclkeappraehcvaitseivereshelaolavf dwo,ladtvaeegr,ae6te0Hcuzr,rreenstisbtyiv2e0o%f inductive loVadR.M
80
V
DC reverse voltagReATINGS
VSYMVBROL FM120-MH FM130-MH FM140-MH FM18500-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
MMarakxinigmCuomde(peak) forward current
Maximum Recurrent Peak Reverse Voltage
MAavxiemruamgeRMfoSrwVoaltradgecurrent
IFM 12 13 14 31050 16
VRRM
20
30
40
50
60
VRIMOS
14
21
100
28 35 42
18 10 mA115 120
80 100 150 200 Volts
56
70 mA105
140 Volts
MPaoxiwmeumr dDiCssBilpocaktiinognVoltage
VPDCD
20
30
40 25000 60
80
100 mW150
200 Volts
MJauxnimcutmioAnveteramgepFeorrawtaurrdeRectified Current
PSeatok rFaorgweartdeSmurpgeerCautrurernet 8.3 ms single half sine-wave
ITOj
ITFSsMtg
150
-55~+150
1.0
30
℃ Amp
℃ Amp
superimposed on rated load (JEDEC method)
ETyLpEicaCl TThRerImCaAl RLesCistHanAceR(NAoCteT2)ERISTICS
Typical Junction Capacitance (Note 1)
(Ta=R2Θ5J℃A
CJ
unless
oth erwise
specified)
40
120
℃/W
PF
Operating TempPeraartuarme Reatengre
Storage Temperature Range
TJ Symbol
TSTG
-55 to +125
Test conditions
- 65Mtion+175
M-5a5xto +150
Unit
℃
℃
Reverse breakCdHoAwRAnCvToElRtaISgTeICS
SYMBOVL (FBMR)120-MHIFRM=13100-M0HμAFM140-MH
FM150-MH
80
FM160-MH
FM180-MH
FM1100-MH
V
FM1150-MH
FM1200-MH
UNIT
Maximum Forward Voltage at 1.0A DC
MaRxiemvuemrsAevevraogletaRgeevelresaekCaugrreenct uatrre@nTtA=25℃
Rated DC Blocking Voltage
Forward voltage
NOTES:
@T A=125℃
VF
IR
IR
VF
0.50
VR=70V
IF=100mA
0.70
0.5
10
0.85
0.1
1.2
μ0.A9
0.92 Volt
mAm
V
1- MDeiaosdureedcaatp1aMcHitZaanncdeapplied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Reverse recovery time
CD
trr
VR=6V, f=1MHz
VR=6V, IF=5mA
3.5 pF
4 ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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页数 | 3 页 | ||
下载 | [ DAN202U.PDF 数据手册 ] |
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