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PDF ( 数据手册 , 数据表 ) DX10N60F

零件编号 DX10N60F
描述 N-Channel MOSFET
制造商 Dexin Chip
LOGO Dexin Chip LOGO 


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DX10N60F 数据手册, 描述, 功能
DX10N60R/DX10N60F
N-Channel MOSFET 600V, 10A, 0.7
General Description
These N-channel MOSFET are produced using advanced
DeXin’s MOSFET Technology, which provides low on- state
resistance,rugged avalanche, high switching performance and
excellent quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
VDS = 660V @ Tjmax
ID = 10A
@ VGS = 10V
RDS(ON) 0.7@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
DX F Series
TO-220F
DX Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
G
S
MDP10N60G MDF10N60G
600
660
±30
10 10*
6.3 6.3*
40 40*
156 48
1.25 0.38
15.6
4.5
520
-55~150
`
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jun. 2010 Version 1.2
Symbol
RθJA
RθJC
MDP10N60G
62.5
0.8
MDF10N60G
62.5
2.6
Unit
oC/W
1 www.dexinchip.com







DX10N60F pdf, 数据表
9
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
Jun. 2010 Version 1.2
8 www.dexinchip.com














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