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零件编号 | 2SA1007 | ||
描述 | Silicon PNP Power Transistor | ||
制造商 | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1007
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Complement to Type 2SC2337
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature
-150
V
-6 V
-10 A
100 W
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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页数 | 2 页 | ||
下载 | [ 2SA1007.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
2SA100 | (2SA100 - 2SA104) Ge PNP Drift | ETC |
2SA1001 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SA1002 | Silicon PNP Power Transistor | INCHANGE |
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