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PDF ( 数据手册 , 数据表 ) 2SA1007

零件编号 2SA1007
描述 Silicon PNP Power Transistor
制造商 Inchange Semiconductor
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2SA1007 数据手册, 描述, 功能
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1007
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Complement to Type 2SC2337
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature
-150
V
-6 V
-10 A
100 W
150
-55~150
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