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零件编号 | KTX321U | ||
描述 | EPITAXIAL PLANAR PNP TRANSISTOR | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
MARKING
654
Q2
Type Name
BRQ1
Lot No.
12 3
123
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
KTX321U
EPITAXIAL PLANAR PNP TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 2.00+_ 0.20
2 5 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q1 BASE
3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 COLLECTOR
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP *
PC *
Tj
Tstg
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
-15
-12
-6
-500
-1
150
150
-55 150
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDS
VGSS
ID
PC **
Tch
Tstg
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
30
20
100
150
150
-55 150
2008. 9. 23
Revision No : 1
UNIT
V
V
V
mA
A
mW
UNIT
V
V
mA
mW
1/6
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页数 | 6 页 | ||
下载 | [ KTX321U.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KTX321U | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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