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PDF ( 数据手册 , 数据表 ) KTD1863

零件编号 KTD1863
描述 EPITAXIAL PLANAR NPN TRANSISTOR
制造商 KEC
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KTD1863 数据手册, 描述, 功能
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
High Breakdown Voltage and High Current
: VCEO=80V, IC=1A.
Low VCE(sat)
Complementary to KTB1241.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
100
80
5
1
-1
1
150
-55 150
UNIT
V
V
V
A
A
W
KTD1863
EPITAXIAL PLANAR NPN TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
HK
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
fT
VCB=80V, IE=0
VEB=4V, IC=0
IC=1mA, IB=0
VCE=3V, IC=500mA
IC=500mA, IB=20mA
VCE=10V, IC=50mA, f=100MHz
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
80
70
-
-
-
TYP.
-
-
-
-
-
100
20
MAX.
1
1
-
400
0.4
-
-
UNIT
A
A
V
V
MHz
pF
1998. 8. 21
Revision No : 1
1/2












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