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零件编号 | 1SS106 | ||
描述 | Silicon Schottky Barrier Diode | ||
制造商 | Renesas | ||
LOGO | |||
1 Page
1SS106
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
REJ03G0125-0200Z
(Previous: ADE-208-153A)
Rev.2.00
Oct.23.2003
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal..
Ordering Information
Type No.
1SS106
Cathode
White
2nd band
White
Mark
H
Package Code
DO-35
Pin Arrangement
12
2nd band
Cathode band
1. Cathode
2. Anode
Rev.2.00, Oct.23.2003, page 1 of 4
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页数 | 5 页 | ||
下载 | [ 1SS106.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
1SS104 | SILICON PLANAR TYPE DIODE | Toshiba Semiconductor |
1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching | Hitachi Semiconductor |
1SS106 | SILICON SCHOTTKY BARRIER DIODE | SEMTECH |
1SS106 | Silicon Schottky Barrier Diode | Renesas |
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