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PDF ( 数据手册 , 数据表 ) TMP12N60

零件编号 TMP12N60
描述 N-channel MOSFET
制造商 TRinno
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TMP12N60 数据手册, 描述, 功能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP12N60/TMPF12N60
TMP12N60G/TMPF12N60G
VDSS = 660 V @Tjmax
ID = 12A
RDS(on) = 0.65 W(max) @ VGS= 10 V
D
G
S
Device
TMP12N60 / TMPF12N60
TMP12N60G / TMPF12N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP12N60 / TMPF12N60
TMP12N60G / TMPF12N60G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP12N60(G) TMPF12N60(G)
600
±30
12 12*
7.5 7.5*
48 48*
860
12
23.1
231 53
1.85 0.42
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP12N60(G)
0.54
62.5
May 2010 : Rev0
www.trinnotech.com
TMPF12N60(G)
2.34
62.5
Unit
/W
/W
1/5












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