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零件编号 | TMP13N50G | ||
描述 | N-channel MOSFET | ||
制造商 | TRinno | ||
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1 Page
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP13N50/TMPF13N50
TMP13N50G/TMPF13N50G
VDSS = 550 V @Tjmax
ID = 13A
RDS(on) = 0.48 W(max) @ VGS= 10 V
D
G
S
Device
TMP13N50 / TMPF13N50
TMP13N50G / TMPF13N50G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP13N50 / TMPF13N50
TMP13N50G / TMPF13N50G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP13N50(G) TMPF13N50(G)
500
±30
13 13*
8.2 8.2*
52 52*
563
13
18.3
183 52
1.46 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP13N50(G)
0.63
62.5
May 2010 : Rev1
www.trinnotech.com
TMPF13N50(G)
2.4
62.5
Unit
℃/W
℃/W
1/5
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页数 | 5 页 | ||
下载 | [ TMP13N50G.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
TMP13N50 | N-channel MOSFET | TRinno |
TMP13N50G | N-channel MOSFET | TRinno |
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