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PDF ( 数据手册 , 数据表 ) TMP20N50AG

零件编号 TMP20N50AG
描述 N-channel MOSFET
制造商 TRinno
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TMP20N50AG 数据手册, 描述, 功能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP20N50A(G)/TMPF20N50A(G)
BVDSS
500V
N-channel MOSFET
ID RDS(on)
18A < 0.3W
Device
TMP20N50A / TMPF20N50A
TMP20N50AG / TMPF20N50AG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP20N50A / TMPF20N50A
TMP20N50AG / TMPF20N50AG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP20N50A(G) TMPF20N50A(G)
500
±30
18 18 *
12.4 12.4 *
72 72 *
705
18
29
290 48
2.32 0.38
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP20N50A(G)
0.43
62.5
December 2014 : Rev0.1
www.trinnotech.com
TMPF20N50A(G)
2.6
62.5
Unit
/W
/W
1/7












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