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零件编号 | MS15N50 | ||
描述 | N-Channel MOSFET | ||
制造商 | Bruckewell | ||
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1 Page
MS15N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• Flat Panel Power
• Full and Half Bridge Power Supplies
• Two-Transistor Forward Power Supplies
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
500 V
±30 V
15 A
9A
IDM Drain Current -Pulsed
60 A
IAR Avalanche Current
15 A
EAS Single Pulsed Avalanche Energy
750 mJ
EAR Repetitive Avalanche Energy
25 mJ
dV/dt
Peak Diode Recovery dV/dt
4.5 V/ns
TJ Storage Temperature
• Drain current limited by maximum junction temperature
Publication Order Number: [MS15N50]
150 °C
© Bruckewell Technology Corporation Rev. A -2014
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页数 | 4 页 | ||
下载 | [ MS15N50.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MS15N50 | N-Channel MOSFET | Bruckewell |
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