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PDF ( 数据手册 , 数据表 ) MS1337

零件编号 MS1337
描述 RF & MICROWAVE TRANSISTORS
制造商 Advanced Power Technology
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MS1337 数据手册, 描述, 功能
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
175 MHz
12.5 VOLTS
POUT = 30W MINIMUM
GP = 10 dB GAIN
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor
designed primarily for Class C, VHF communication applications.
The MS1337 utilizes an emitter ballasted die geometry to
withstand severe load mismatch conditions.
MS1337
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
VCEO
VCES
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
PDISS
TJ
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
053-7069 Rev - 10-2002
Value
36
18
36
4.0
8.0
70
+200
-65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
°C/W












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