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PDF ( 数据手册 , 数据表 ) W13NK80Z

零件编号 W13NK80Z
描述 STW13NK80Z
制造商 STMicroelectronics
LOGO STMicroelectronics LOGO 


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W13NK80Z 数据手册, 描述, 功能
STW13NK80Z
N-channel 800V - 0.53- 12A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW13NK80Z
VDSS
800V
RDS(on)
<0.65
ID pW
12A 230W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
t(s)Very good manufacturing repeatibility
ucDescription
rodThe SuperMESH™ series is obtained through an
Pextreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
tepushing on-resistance significantly down, special
lecare is taken to ensure a very good dv/dt
ocapability for the most demanding applications.
bsSuch series complements ST full range of high
voltage MOSFETs including revolutionary
- OMDmesh™ products.
t(s)Applications
ucSwitching application
TO-247
Internal schematic diagram
te ProdOrder codes
olePart number
ObsSTW13NK80Z
Marking
W13NK80Z
Package
TO-247
Packaging
Tube
October 2006
Rev 4
1/14
www.st.com
14







W13NK80Z pdf, 数据表
Electrical characteristics
STW13NK80Z
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
) - Obsolete Product(s)Figure 11. Source-drain diode forward
Obsolete Product(scharacteristics
Figure 12. Normalized breakdown voltage vs
temperature
8/14














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