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PDF ( 数据手册 , 数据表 ) FJB3307D

零件编号 FJB3307D
描述 High Voltage Fast Switching NPN Power Transistor
制造商 Fairchild Semiconductor
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FJB3307D 数据手册, 描述, 功能
March 2012
FJB3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
1 D2-PAK
1.Base 2.Collector 3.Emitter
B
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current (DC)
IBP * Base Current (Pulse)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed
Value
700
400
9
8
16
4
8
150
-55 to 150
Thermal Characteristics
Symbol
PD
Parameter
Total Device Dissipation
Rθja Thermal Resistance, Junction to Ambient
Rθjc Thermal Resistance, Junction to Case
Ta = 25°C
Tc = 25°C
Value
1.72
80
72.5
1.56
Units
V
V
V
A
A
A
A
°C
°C
Units
W
W
°C/W
°C/W
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
1
www.fairchildsemi.com












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