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零件编号 | FJB102 | ||
描述 | High Voltage Power Darlington Transistor | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
FJB102
High Voltage Power Darlington Transistor
Features
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Low Collector-Emitter Saturation Voltage
• High Collector-Emitter Sustaining Voltage
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• Industrial Use
Equivalent Circuit
C
B
1 D2-PAK
1.Base 2.Collector 3.Emitter
R1
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
R2
E
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Value
100
100
5
8
15
1
80
150
-65 ~ 150
Device Marking
FJB102
Device
FJB102
Package
D2-PAK
Reel Size
13” Dia
Tape Width
-
Units
V
V
V
A
A
A
W
°C
°C
Quantity
800
©2005 Fairchild Semiconductor Corporation
FJB102 Rev. A
1
www.fairchildsemi.com
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页数 | 5 页 | ||
下载 | [ FJB102.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FJB102 | High Voltage Power Darlington Transistor | Fairchild Semiconductor |
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