DataSheet8.cn


PDF ( 数据手册 , 数据表 ) FJB102

零件编号 FJB102
描述 High Voltage Power Darlington Transistor
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


1 Page

No Preview Available !

FJB102 数据手册, 描述, 功能
FJB102
High Voltage Power Darlington Transistor
Features
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Low Collector-Emitter Saturation Voltage
• High Collector-Emitter Sustaining Voltage
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• Industrial Use
Equivalent Circuit
C
B
1 D2-PAK
1.Base 2.Collector 3.Emitter
R1
R1 10k
R2 0.6k
R2
E
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Value
100
100
5
8
15
1
80
150
-65 ~ 150
Device Marking
FJB102
Device
FJB102
Package
D2-PAK
Reel Size
13” Dia
Tape Width
-
Units
V
V
V
A
A
A
W
°C
°C
Quantity
800
©2005 Fairchild Semiconductor Corporation
FJB102 Rev. A
1
www.fairchildsemi.com












页数 5 页
下载[ FJB102.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
FJB102High Voltage Power Darlington TransistorFairchild Semiconductor
Fairchild Semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap