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PDF MJ1001 ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
21 | MJ10012 | NPN SILICON POWER DARLINGTON TRANSISTORS |
Boca Semiconductor Corporation |
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20 | MJ1001 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal cas |
Comset Semiconductors |
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19 | MJ10012T | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGTON |
Inchange Semiconductor |
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18 | MJ10016 | POWER TRANSISTORS(50A/400-500V/250W) A A A A |
Mospec Semiconductor |
零件编号 | 功能 ( 描述 ) | 制造商 | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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BA6343 | Stepping motor driver |
ROHM |
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BM63 | Bluetooth 4.2 Stereo Audio Module |
Microchip |
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