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PDF K4S561632J ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
1 | K4S561632J | 256Mb J-die SDRAM Specification K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN REL |
Samsung semiconductor |
K4S561632 数据手册 - 完全等于 |
零件编号 | 描述 | 制造商 | |
K4S561632J | 256Mb J-die SDRAM Specification | Samsung semiconductor |
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K4S561632C | 256Mbit SDRAM | Samsung |
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K4S561632H | 256Mb H-Die SDRAM | Samsung Electronics |
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K4S561632A | 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
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K4S561632N | 256Mb N-die SDRAM | Samsung semiconductor |
零件编号 | 功能 ( 描述 ) | 制造商 | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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BA6343 | Stepping motor driver |
ROHM |
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BM63 | Bluetooth 4.2 Stereo Audio Module |
Microchip |
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