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PDF IRG7PK35UD1PBF ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
1 | IRG7PK35UD1PBF | Insulated Gate Bipolar Transistor IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G |
International Rectifier |
IRG7PK35UD1PB 数据手册 - 完全等于 |
零件编号 | 描述 | 制造商 | |
IRG7PK35UD1PBF | Insulated Gate Bipolar Transistor | International Rectifier |
零件编号 | 功能 ( 描述 ) | 制造商 | |
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