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PDF IRFP150N ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
4 | IRFP150N | N-Channel Power MOSFET / Transistor IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V |
Fairchild Semiconductor |
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3 | IRFP150N | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150N Features ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance |
Inchange Semiconductor |
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2 | IRFP150NPBF | Power MOSFET ( Transistor ) • Lead-Free PD - 95002 IRFP150NPbF www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 w |
International Rectifier |
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1 | IRFP150N | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifie |
International Rectifier |
零件编号 | 功能 ( 描述 ) | 制造商 | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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BA6343 | Stepping motor driver |
ROHM |
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BM63 | Bluetooth 4.2 Stereo Audio Module |
Microchip |
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