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PDF GA05JT12-263 ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
1 | GA05JT12-263 | Junction Transistor GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A 175 °C maximum operating temperature Temperature in |
GeneSiC |
GA05JT12-26 数据手册 - 完全等于 |
零件编号 | 描述 | 制造商 | |
GA05JT12-263 | Junction Transistor | GeneSiC |
零件编号 | 功能 ( 描述 ) | 制造商 | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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ROHM |
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Microchip |
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