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PDF F1060 ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
2 | F1060 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Ba |
Polyfet RF Devices |
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1 | F1060CT | Schottky Barrier Rectifiers Production specification Schottky Barrier Rectifiers FEATURES z STSD F1030CT---STSD F1060CT Metal-Semiconductor Junction with Guard Ring. z Epit axial Construction. z Pb Lead-free Low |
Tasund |
零件编号 | 功能 ( 描述 ) | 制造商 | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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BA6343 | Stepping motor driver |
ROHM |
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BM63 | Bluetooth 4.2 Stereo Audio Module |
Microchip |
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