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零件编号 功能 ( 描述 ) 制造商 PDF
11 C1815-G   General Purpose transistors

General Purpose Transistors COMCHIP SMD Diodes Specialist C1815-G (NPN) RoHS Device Features -Power dissipation P CM =0.2W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marki
Comchip Technology
Comchip Technology
PDF
10 C1815LT1   TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector c
Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
PDF
9 C1815   Plastic Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise note
Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
PDF
8 C1815   NPN Transistor

C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V
RECTRON
RECTRON
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