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PDF AT49BV161-70TI ( 数据表 ) |
零件编号 | 功能 ( 描述 ) | 制造商 | ||
115 | AT49BV16X4 | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Se |
ATMEL Corporation |
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114 | AT49BV16X4 | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Se |
ATMEL Corporation |
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113 | AT49BV163AT-70TI | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individua |
ATMEL Corporation |
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112 | AT49BV163AT | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individua |
ATMEL Corporation |
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