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零件编号 功能 ( 描述 ) 制造商 PDF
2 2SK3141   Silicon N Channel MOS FET High Speed Power Switching

2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V

Hitachi Semiconductor
Hitachi Semiconductor
PDF
1 2SK3141   Silicon N-Channel MOS FET

2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V sour

Renesas
Renesas
PDF


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