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零件编号 功能 ( 描述 ) 制造商 PDF
2 2SK2019-01   N-channel MOS-FET

2SK2019-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 50

Fuji Electric
Fuji Electric
PDF
1 2SK2019-01   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2019-01 DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fa

Inchange Semiconductor
Inchange Semiconductor
PDF


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